Product Descriptions
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench? process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Product Features
? Max rDS(on) = 51mΩ at VGS = 10V, ID = 4.6A
? Max rDS(on) = 70mΩ at VGS = 6V, ID = 3.9A
? Advanced package and silicon combination for low rDS(on) and high efficiency
? MSL1 robust package design
? 100% UIL tested?RoHS Compliant General Description
Product Applications
? DC-DC Conversion
Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-FDMS86252 |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | onsemi |
| Series | PowerTrench? |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel? | |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Ta), 16A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 4.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 905 pF @ 75 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 69W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package / Case | 8-PowerTDFN |
| Base Product Number | FDMS86 |
Actual product photos
Product Data Book：
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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